V35PWM10 www.vishay.com vishay general semiconductor revision: 01-jun-17 1 document number: 87502 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high current density surface mount trench mos barrier schottky rectifier ultra low v f = 0.41 v at i f = 5 a features ? very low profile - typical height of 1.3 mm ? trench mos schottky technology ? ideal for automated placement ? low forward voltage drop, low power losses ? high efficiency operation ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified available - automotive ordering code: base p/nhm3 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in low voltage high frequency dc/dc converters, freewheeling diodes, and polari ty protection applications. mechanical data case: slimdpak (to-252ae) molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-free, rohs-compliant base p/nhm3 - halogen-free, rohs-compliant, and aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 and hm3 suffix meets jesd 201 class 2 whisker test notes (1) with infinite heatsink (2) the heat generated must be less than the thermal conductivity from junction to ambient: dp d /dt j < 1/r ja primary characteristics i f(av) 35 a v rrm 100 v i fsm 260 a v f at i f = 35 a (t a = 125 c) 0.68 v t j max. 175 c package slimdpak (to-252ae) circuit configuration single s limdpak (to-252ae) tmb s ? e s mp ? s eries 1 2 k pin 1 k heat s ink pin 2 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol V35PWM10 unit device marking code V35PWM10 maximum repetitive pe ak reverse voltage v rrm 100 v maximum average forward rectified current (fig. 1) i f(av) (1) 35 a peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 260 a operating junction temperature range t j (2) -40 to +175 c storage temperature range t stg -55 to +175 c
V35PWM10 www.vishay.com vishay general semiconductor revision: 01-jun-17 2 document number: 87502 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 5 ms notes (1) the heat generated must be less than therma l conductivity from junction-to-ambient: dp d /dt j < 1/r ja (2) free air, mounted on recommended copper pad area; thermal resistance r ja - junction to ambient (3) mounted on infinite heat sink; thermal resistance r jm - junction-to-mount note (1) aec-q101 qualified electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage i f = 5.0 a t a = 25 c v f (1) 0.50 - v i f = 17.5 a 0.69 - i f = 35 a 0.82 0.90 i f = 5.0 a t a = 125 c 0.41 - i f = 17.5 a 0.61 - i f = 35 a 0.68 0.76 reverse current v r = 70 v t a = 25 c i r (2) 0.01 - ma t a = 125 c 4 - v r = 100 v t a = 25 c - 0.8 t a = 125 c 8 25 typical junction capa citance 4.0 v, 1 mhz c j 2500 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol V35PWM10 unit typical thermal resistance r ja (1)(2) 55 c/w r jm (3) 1.5 ordering information (example) preferred p/n unit weight (g) preferred pa ckage code base quantity delivery mode V35PWM10-m3/i 0.20 i 4500 13" diameter plastic tape and reel V35PWM10hm3/i (1) 0.20 i 4500 13" diameter plastic tape and reel
V35PWM10 www.vishay.com vishay general semiconductor revision: 01-jun-17 3 document number: 87502 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse leakage characteristics fig. 5 - typical j unction capacitance fig. 6 - typical transient thermal impedance 0 10.0 20.0 30.0 40.0 0 255075100125150175 average forward rectified current (a) mount temperature ( c) t m = 136 c, rth jm = 1.5 c/w t a = 25 c, rth ja = 55 c/w 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 5 10 15 20 25 30 35 40 average power lo ss (w) average forward current (a) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 1.0 d = 0.8 d = t p /t t t p 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 in s tantaneou s forward current (a) in s tantaneou s forward voltage (v) t j = 150 c t j = 25 c t j = 100 c t j = 125 c t j = 175 c 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 in s tantaneou s rever s e current (ma) percent of rated peak rever s e voltage (%) t j = 150 c t j = 125 c t j = 100 c t j = 25 c t j = 175 c 1 10 100 1000 10 000 0.1 1 10 100 junction capacitance (pf) rever s e voltage (v) t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 0.1 1 10 100 0.01 0.1 1 10 100 tran s ient thermal impedance ( c/w) t - pul s e duration ( s ) junction to ambient junction to mount
V35PWM10 www.vishay.com vishay general semiconductor revision: 01-jun-17 4 document number: 87502 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - typical resistance junction to ambient vs. copper pad areas package outline dimensions in inches (millimeters) 0 10 20 30 40 50 60 70 80 012345678910 thermal re s i s tance ( c/w) copper pad area s (cm 2 ) epoxy printed circuit board fr4 copper thickne ss = 70 m s (cm 2 ) (9.40) (8.60) 0.370 0.339 (6.72) (6.48) 0.265 0.255 (6.32) (6.08) 0.249 0.239 (0.70) (0.30) 0.028 0.012 (0.41) (0.25) 0.016 0.010 (1.40) (1.20) (0.20) (0.00) 0.008 0.000 (1.40) (1.00) 0.055 0.039 (5.70) (5.30) 0.224 0.209 min. 0.240 (6.10) min. 0.235 (5.97) ref. 0.386 (9.80) min. 0.075 (1.90) min. 0.055 (1.40) nom. 0.090 (2.29) 0.055 0.047 0.090 (2.29) nom. 0.180 (4.57) nom. (0.90) (0.70) 0.035 0.028 nom. 0.205 (5.20) mountin g pad layout s limdpak (to-252ae)
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